Thermodynamic Field Theory of the Dynamic Behavior of Bipolar Junction Transistors

Bipolar junction transistors play an important role in integrated-circuits, whether monolithic, or hybrid. Integrated circuit designers are obliged to use as many transistors as they can in their design, since this entails very little increase in cost. More importantly, a bipolar transistor in an integrated circuit can be connected to substitute for other components that are hard to be integrated in the same substrate. The thermodynamic field theory of generalized fields (TTGF) has had success for predicting the voltage current relationship in p-n junctions and solar cells in d-c cases. The primary object of this thesis is to apply the thermodynamic field theory to an interfacial problem which has time-varying fields. Specifically, we shall apply the concepts of TTGF to investigate the dynamic response of p-n junction devices when fed a small a-c signal. In previous applications of the TTGF, single junction devices have been considered. In this study, we apply the TTGF to a multijunction device : the bipolar transistor. In Chapter I, a brief introduction and literature review are given. In Chapter II, an introduction to the TTGF is given. Included also is a recently derived TTGF equation which governs the interaction of time varying fields in a system involving interfaces and carriers which may recombine and accumulate. Chapter III is a review for the one dimen- tional solution of the continuity equation. Both the d-c and a-c solutions are reviewed. In Chapter IV, the reverse biased junction is covered from the point of view of the TTGF. Force fields are identified, evaluated and the work done on the composite carrier in the respective regions is calculated. Chapter V covers the forward biased junction. Work done by force fields has been calculated. Energy due to carrier accumulation and recombination have been calculated. The law of conservation energy has been applied over the emitter-base and the emitter-base-collector loops. From the resulting equations, the input admittance of the common emitter transistor configuration has been calculated. Comparison between theory and experiment is provided. Finally, in Chapter VI, a conclusion has been drawn. Suggested future studies also have been given.