Copper Area Selective Atomic Layer Deposition for Plasmonic Metallic Nanostructures
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http://hdl.handle.net/11134/20002:860668164
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Creator (cre): Zhang, Chengwu
Major Advisor (mja): Willis, Brian G.
Associate Advisor (asa): Zhao, Jing
Associate Advisor (asa): Valla, Julia
Associate Advisor (asa): Biyikli, Necmi
Associate Advisor (asa): Agrios, Alexander
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Copper Area Selective Atomic Layer Deposition for Plasmonic Metallic Nanostructures
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born digital
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Description
Plasmonics, a flourishing e Plasmonics, a flourishing e Plasmonics, a flourishing e Plasmonics, a flourishing e Plasmonics, a flourishing e Plasmonics, a flourishing e Plasmonics, a flourishing e Plasmonics, a flourishing emergent sciencmergent scienc mergent scienc mergent scienc mergent scienc mergent science and e and e and technology, is about the technology, is about the technology, is about the technology, is about the technology, is about the technology, is about the technology, is about the technology, is about the interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles.interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles.interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles.interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles.interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles. interactions between electromagnetic radiation and electrons at metallic nanoparticles.interactions between electromagnetic radiation and electrons at metallic nanoparticles. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures.It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures.It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures.It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures.It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures. It opens a new pathway for controlling chemical reactions on metallic nanostructures.It opens a new pathway for controlling chemical reactions on metallic nanostructures. Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub Plasmonic dimers, especially with sub -10 nm nanogaps, c 10 nm nanogaps, c 10 nm nanogaps, c10 nm nanogaps, c 10 nm nanogaps, can greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local an greatly enhance local electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective electric field intensity through excitations of surface plasmons, which are collective oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic oscillations of electrons excited by light. Previous studies to fabricate plasmonic dimers with sub dimers with sub dimers with subdimers with sub dimers with sub -10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as e 10 nm nanogaps include techniques such as electromigration, lectromigration, lectromigration, lectromigration, lectromigration, lectromigration, electroless gold plating, self electroless gold plating, selfelectroless gold plating, self electroless gold plating, self electroless gold plating, self electroless gold plating, selfelectroless gold plating, self electroless gold plating, self electroless gold plating, self electroless gold plating, self-assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. assembly, and high resolution electron beam lithography. However, these However, these However, these However, these However, these methodsmethods are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. are limited either in pattern design or low yield for scaling up. To attain more flexibility and reliability in fabrication, theTo attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, theTo attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, theTo attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, the To attain more flexibility and reliability in fabrication, there is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable re is a need for scalable methods to fabricate plasmonic dimers with submethods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with submethods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with submethods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with submethods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with submethods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub methods to fabricate plasmonic dimers with sub -10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for 10 nm nanogaps, which is crucial for their use in practical applications. their use in practical applications. their use in practical applications. their use in practical applications. their use in practical applications. their use in practical applications. Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thinAtomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thinAtomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin Atomic layer deposition (ALD) is a thin-film deposition technique capable of film deposition technique capable of film deposition technique capable of film deposition technique capable of film deposition technique capable of film deposition technique capable of film deposition technique capable of film deposition technique capable of film deposition technique capable of producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the producing conformal thin films with precise control of thickness and composition at the atomic level. Area atomic level. Area atomic level. Area atomic level. Areaatomic level. Area -selective ALD (AS selective ALD (AS selective ALD (AS selective ALD (AS selective ALD (AS selective ALD (AS -ALD) is a bottom ALD) is a bottom ALD) is a bottom ALD) is a bottom ALD) is a bottom -up process for direct up process for direct up process for direct up process for direct up process for direct up process for direct deposition of deposition of deposition of deposition of materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials only on desired regions of a substrate. In this study, we have materials explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve explored incident light excitations and plasmonic resonances matching to achieve localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the arealocalized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the arealocalized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area localized surface plasmon resonances (LSPRs) in the area -selective atomic layer selective atomic layer selective atomic layer selective atomic layer selective atomic layer deposition (AS deposition (AS deposition (AS deposition (AS-ALD) p ALD) p ALD) process. rocess. rocess. rocess. We have applied copper AS e have applied copper AS e have applied copper AS e have applied copper AS e have applied copper ASe have applied copper AS e have applied copper ASe have applied copper AS -ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of ALD to tune gap sizes of layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipolelayered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipolelayered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipolelayered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole layered and mixed plasmonic dimer arrays electrically connected dipole -line arrays line arrays to sub to sub -10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS10 nm. Results demonstrate that AS10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS10 nm. Results demonstrate that AS10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS 10 nm. Results demonstrate that AS10 nm. Results demonstrate that AS -ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to ALD is a reliable and flexible method to achieve sub achieve sub achieve sub -10 nm gaps on 10 nm gaps on10 nm gaps on large area arrays. large area arrays. large area arrays.
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Genre
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Organizations |
Organizations
Degree granting institution (dgg): University of Connecticut
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Use and Reproduction |
Use and Reproduction
These Materials are provided for educational and research purposes only.
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Note
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Degree Name |
Degree Name
Doctor of Philosophy
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Degree Level |
Degree Level
Doctoral
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Degree Discipline |
Degree Discipline
Chemical Engineering
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Local Identifier |
Local Identifier
S_21939156
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