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http://hdl.handle.net/11134/20002:860675947
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Description |
Description
Experimental studies show that CdS, a type II-VI compound semiconductor, exhibits a large (>100%) increase in flow stress when irradiated with light during plastic deformation. The observed photoplastic behavior is unique to dislocation motion on basal planes, and is shown to be the result of the immobilization of charged dislocations by photo-induced charge carriers. Results of photoplasticity experiments which examine the influence of: 1) slip direction, 2) light intensity and frequency, 3) temperature, and 4) defect level, are presented. The results are interpreted in terms of Coulombic interactions between charged dislocations and trapped electron holes. A model of the specific nature of the Coulombic interactions is proposed. Various additional theories put forth to explain photoplasticity in II-VI compounds are critically analyzed in respect to the present results.
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ix, 133 leaves, bound : illustrations ; 28 cm
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Use and Reproduction |
Use and Reproduction
These materials are provided for educational and research purposes only.
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